this is information on a product in full production. february 2014 docid024949 rev 2 1/8 STPS3L45AF power schottky rectifier datasheet - production data features ? negligible switching losses ? low thermal resistance ? low forward voltage drop ? avalanche capability specified description schottky rectifier suited for switched mode power supplies and high frequency dc to dc converters. packaged in a tiny smaflat package, this device has been optimized for use in compact chargers. figure 1. electrical characteristics (a) smaflat (non exposed pad) STPS3L45AF k a a. v arm and i arm must respect the reverse safe operating area defined in figure 11 . v ar and i ar are pulse measurements (t p < 10 s). v r , i r , v rrm and v f , are static characteristics table 1. device summary symbol value i f(av) 3 a v rrm 45 v t j (max) 150 c v f (typ) 0.462 v i f 2 x i o i o i r i ar v f(i o ) v to v f(2xi o ) v f v i i v v r v rrm "reverse" "forward" v ar x x www.st.com
characteristics STPS3L45AF 2/8 docid024949 rev 2 1 characteristics to evaluate the conduction losses use the following equation: p = 0.36 x i f(av) + 0.05 i f 2 (rms) table 2. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter test conditions value unit v rrm repetitive peak reverse voltage 45 v i f(av) average forward current t l = 120 c = 0.5 3 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 75 a p arm (1) 1. for pulse time duration deratings, please refer to figure 4 . more details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the stmicroelectronics application notes an1768, ?admissible avalanche power of schottky diodes? and an2025, ?converter improvement using schottky rectifier avalanche specification?. repetitive peak avalanche power t p = 10 s tj = 125 c 70 w v arm (2) 2. refer to figure 11 maximum repetitive peak avalanche voltage t p < 10 s, tj < 125 c, i ar < 1.4 a 50 v v asm (2) maximum single pulse peak avalanche voltage t p < 10 s, tj < 125 c, i ar < 1.4 a 50 v t stg storage temperature range -65 to + 175 c t j operating junction temperature (3) 3. condition to avoid thermal runaway for a diode on its own heatsink 150 c table 3. thermal resistance symbol parameter value unit r th(j-l) thermal resistance junction to lead 15 c/w table 4. static electrical characteristics symbol parameter test conditions typ. max. unit i r (1) 1. pulse test: t p = 380 s, < 2% reverse leakage current t j = 25 c v r = v rrm 80 300 a t j = 125 c 66 135 ma v f (1) forward voltage drop t j = 25 c i f = 3 a 0.462 0.57 v t j = 125 c 0.41 0.51 dptot dtj --------------- 1 rth j a ? () ------------------------- - <
docid024949 rev 2 3/8 STPS3L45AF characteristics 8 figure 2. average forward power dissipation versus average forward current figure 3. average forward current versus ambient temperature ( = 0.5) p f(av) (w) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t =tp/t tp = 0.05 =1 =0.5 =0.2 =0.1 i f(av) (a) i f(av) (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 t amb (c) r th(j-a) = r th(j-l) t =tp/t tp figure 4. normalized avalanche power derating versus pulse duration figure 5. relative variation of thermal impedance junction to lead versus pulse duration 0,001 0,01 0,1 1 1 10 100 1000 t p s () p arm tp /p arm 10s () ( ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 single pulse z th(j- ) /r th(j- ) ll t p (s) figure 6. reverse leakage current versus reverse voltage applied (typical values) figure 7. junction capacitance versus reverse voltage applied (typical values) i r (ma) 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 5 10 15 20 25 30 35 40 45 v r (v) t j = 25c t j = 25c t j = 50c t j = 75c t j = 125c t j = 100c t j = 150c c(pf) 10 100 1000 1 10 100 v r (v) f = 1mhz v osc = 30mv rms t j = 25c
characteristics STPS3L45AF 4/8 docid024949 rev 2 figure 8. forward voltage drop versus forward current (typical values) figure 9. forward voltage drop versus forward current (maximum values) i f (a) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v(v) f t = 125c j t = 25c j 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v(v) f t = 25c j t = 125c j i f (a) figure 10. thermal resistance junction to ambient versus copper surface under each lead (typical values) figure 11. reverse safe operating area (t p <10s and t j < 125 c) r th(j-a) (c/w) 0 50 100 150 200 012345 s cu (cm2) epoxy printed board fr4, copper thickness cu = 35 m 0,6 0,8 1,0 1,2 1,4 1,6 45 55 65 75 85 95 v arm (v) i arm (v)
docid024949 rev 2 5/8 STPS3L45AF package information 8 2 package information ? epoxy meets ul94,v0 ? lead-free packages in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 12. smaflat (non-exposed pad) dimension definitions table 5. smaflat (non-exposed pad) dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.90 1.10 0.035 0.043 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 d 2.25 2.95 0.088 0.116 e 4.80 5.60 0.189 0.220 e1 3.95 4.60 0.155 0.181 l 0.75 1.50 0.029 0.059 l1 0.50 0.020 l2 0.50 0.020 c l2x d a l2 2x l1 2x b ee1
package information STPS3L45AF 6/8 docid024949 rev 2 figure 13. smaflat (non-exposed pad) footprint dimensions in mm (inches) 5.84 (0.230) 3.44 (0.136) 1.20 (0.047) 1.20 (0.047) 2.07 (0.082)
docid024949 rev 2 7/8 STPS3L45AF ordering information 8 3 ordering information 4 revision history table 6. ordering information order code marking package weight base qty delivery mode STPS3L45AF f3l45 smaflat (non-exposed pad) 0.035 g 10000 tape and reel table 7. document revision history date revision description of changes 08-jul-2013 1 first release. 03-feb-2014 2 updated table 5 , figure 12 and figure 13 .
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